发明名称 |
Ambient infrared detection in solid state sensors |
摘要 |
A solid state imaging device includes an array of active pixels and an infrared cut filter formed over the sensor. Optionally, a slot in the infrared cut filter allows infrared illumination to reach the sensor to be detected by pixels covered by a visually opaque filter and surrounded by pixels of special types that limit charge leakage and enable high dynamic range sensing of infrared illumination. A ratio of average infrared signal to average brightness indicates an amount of infrared illumination reaching the imaging device. |
申请公布号 |
US9252176(B2) |
申请公布日期 |
2016.02.02 |
申请号 |
US201314063069 |
申请日期 |
2013.10.25 |
申请人 |
Micron Technology, Inc. |
发明人 |
Ovsiannikov Ilia;Zhang Xuemei;Jerdev Dmitri |
分类号 |
H01L27/146;G03B13/02 |
主分类号 |
H01L27/146 |
代理机构 |
Dicke, Billig & Czaja, PLLC |
代理人 |
Dicke, Billig & Czaja, PLLC |
主权项 |
1. An image sensor device, comprising:
an array of pixels; an infrared cutoff filter over a first area of the array of pixels; and a filter over a second area of the array of pixels that is configured to block visible illumination and that is transparent to infrared illumination. |
地址 |
Boise ID US |