发明名称 Ambient infrared detection in solid state sensors
摘要 A solid state imaging device includes an array of active pixels and an infrared cut filter formed over the sensor. Optionally, a slot in the infrared cut filter allows infrared illumination to reach the sensor to be detected by pixels covered by a visually opaque filter and surrounded by pixels of special types that limit charge leakage and enable high dynamic range sensing of infrared illumination. A ratio of average infrared signal to average brightness indicates an amount of infrared illumination reaching the imaging device.
申请公布号 US9252176(B2) 申请公布日期 2016.02.02
申请号 US201314063069 申请日期 2013.10.25
申请人 Micron Technology, Inc. 发明人 Ovsiannikov Ilia;Zhang Xuemei;Jerdev Dmitri
分类号 H01L27/146;G03B13/02 主分类号 H01L27/146
代理机构 Dicke, Billig & Czaja, PLLC 代理人 Dicke, Billig & Czaja, PLLC
主权项 1. An image sensor device, comprising: an array of pixels; an infrared cutoff filter over a first area of the array of pixels; and a filter over a second area of the array of pixels that is configured to block visible illumination and that is transparent to infrared illumination.
地址 Boise ID US
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