Thin film transistor array panel and method of manufacturing the same

摘要

A thin film transistor array panel includes a first insulating substrate, a gate electrode positioned on the first insulating substrate, a gate insulating layer positioned on the gate electrode, a semiconductor layer positioned on the gate insulating layer, and a source electrode and a drain electrode positioned on the semiconductor layer and spaced apart from each other, in which the semiconductor layer includes three or more amorphous silicon layers having different bandgap energies from one another in order to reduce a leakage current and improve performance of a liquid crystal display.

主权项

1. A thin film transistor array panel comprising:
a first insulating substrate; a gate electrode positioned on the first insulating substrate; a gate insulating layer positioned on the gate electrode; a semiconductor layer positioned on the gate insulating layer; and a source electrode and a drain electrode positioned on the semiconductor layer and spaced apart from each other, wherein the semiconductor layer includes amorphous silicon, and includes:
a first semiconductor layer formed on the gate insulating layer,a second semiconductor layer formed over the entire top portion of the first semiconductor layer, anda third semiconductor layer formed over the entire top portion of the second semiconductor layer, andwherein the first, second and third semiconductor layers having different bandgap energies from one another.