Methods and apparatuses for forming multiple radio frequency (RF) components associated with different RF bands on a chip

摘要

A method includes forming a first gate oxide in a first region and in a second region of a wafer. The method further includes performing first processing to form a second gate oxide in the second region. The second gate oxide has a different thickness than the first gate oxide. The method also includes forming first gate material of a first device in the first region and forming second gate material of a second device in the second region. The first device corresponds to a first radio frequency (RF) band and the second device corresponds to a second RF band that is different from the first RF band.

主权项

1. A device comprising:
a first radio frequency (RF) component on a die, wherein the first RF component includes a first gate oxide having a first thickness, and wherein the first RF component is customized to operate in a first RF band associated with a first frequency; and a second RF component on the die, wherein the second RF component includes a second gate oxide having a second thickness that is less than the first thickness, and wherein the second RF component is customized to operate in a second RF band associated with a second frequency that is greater than the first frequency.