发明名称 Organic light emitting diode display device and method of fabricating the same
摘要 A method of fabricating an organic light emitting diode display device, which include forming a thin film transistor in a display region of a substrate, forming a metal pattern on the substrate in the display region, forming a first electrode on the substrate connected to the thin film transistor, forming a bank on the substrate to expose a portion of the first electrode and a portion of the metal pattern, forming a hole common layer, an organic light emitting layer, and an electron common layer sequentially over the entire surface of the substrate provided with the first electrode, the bank and the metal pattern, forming a photoresist pattern covering the electrode common layer and removing the hole common layer, the organic light emitting layer and the electron common layer using the photoresist pattern as a mask, removing the photoresist pattern, and forming a second electrode on the electron common layer connected to the metal pattern.
申请公布号 US9252398(B2) 申请公布日期 2016.02.02
申请号 US201514676511 申请日期 2015.04.01
申请人 LG DISPLAY CO., LTD. 发明人 Heo Joon-Young;Yoon Jong-Geun
分类号 H01L21/00;H01L51/56;H01L51/00;H01L51/52;H01L27/32 主分类号 H01L21/00
代理机构 Birch, Stewart, Kolasch & Birch, LLP 代理人 Birch, Stewart, Kolasch & Birch, LLP
主权项 1. A method of fabricating an organic light emitting diode display device, the method comprising: forming a thin film transistor in a display region of a substrate, the substrate having a display region and a non-display region; forming a metal pattern on the substrate in the display region; forming a first electrode on the substrate connected to the thin film transistor; forming a bank on the substrate to expose a portion of the first electrode and a portion of the metal pattern; forming a hole common layer, an organic light emitting layer, and an electron common layer sequentially over the entire surface of the substrate provided with the first electrode, the bank and the metal pattern; forming a photoresist pattern to cover the electrode common layer above the first electrode and to open the electrode common layer above the metal pattern; removing the electron common layer, the organic light emitting layer and the hole common layer on the metal pattern using the photoresist pattern as a mask by dry etching; removing the photoresist pattern; and forming a second electrode on the electron common layer connected to the metal pattern.
地址 Seoul KR