| 发明名称 | P-type transition metal oxide-based films serving as hole transport layers in organic optoelectronic devices | ||
| 摘要 | An improvement in a method of making a semiconducting device having a hole-collecting electrode includes coating the hole-collecting electrode with a p-type transition metal oxide through a sol-gel process. | ||
| 申请公布号 | US9252365(B2) | 申请公布日期 | 2016.02.02 |
| 申请号 | US201214354272 | 申请日期 | 2012.10.29 |
| 申请人 | The University of Akron | 发明人 | Gong Xiong;Yang Tingbin |
| 分类号 | H01L21/00;H01L51/00;H01L51/42;H01L51/44;H01L51/56 | 主分类号 | H01L21/00 |
| 代理机构 | Renner, Kenner, Greive, Bobak, Taylor & Weber | 代理人 | Renner, Kenner, Greive, Bobak, Taylor & Weber |
| 主权项 | 1. In a method of making a semiconducting device having a hole-collecting electrode and an active layer, the improvement comprising: coating the hole-collecting electrode with NiO through a sol-gel process, and providing the active layer to include PBDT-DTNT. | ||
| 地址 | Akron OH US | ||