Semiconductor light emitting element and method for manufacturing same

摘要

According to one embodiment, a semiconductor light emitting element includes a conductive substrate, a bonding portion, an intermediate metal film, a first electrode, a semiconductor stacked body and a second electrode. The bonding portion is provided on the support substrate and including a first metal film. The intermediate metal film is provided on the bonding portion and having a larger linear expansion coefficient than the first metal film. The first electrode is provided on the intermediate metal film and includes a second metal film having a larger linear expansion coefficient than the intermediate metal film. The semiconductor stacked body is provided on the first electrode and including a light emitting portion. The second electrode is provided on the semiconductor stacked body.

主权项

1. A semiconductor light emitting element comprising:
a support substrate; a semiconductor stacked body including a light emitting portion, the semiconductor stacked body having a first surface and a second surface opposite to the first surface; a first electrode provided between the second surface and the support substrate; a bonding portion provided between the first electrode and the support substrate; and a film covering a side surface of the semiconductor stacked body, the bonding portion covering the first electrode, the bonding portion being in contact with the support substrate, the bonding portion including a first portion and a second portion the first portion provided between the first electrode and the second portion, the first portion extending beyond an outer edge of the second portion in a first direction that is parallel to the second surface, the first portion having a third surface that is parallel to the second surface, and the semiconductor stacked body and the film each having a portion contacting the first portion along the third surface.