| 发明名称 | Method for manufacturing nitride semiconductor element | ||
| 摘要 | A first nitride semiconductor layer laminating step includes a first step and a second step. In the first step, an entire upper surface of the sapphire substrate is coated with a first nitride semiconductor layer, while supplying oxygen. In the second step, crystals of the first nitride semiconductor layer are grown by supplying oxygen at a smaller flow rate than that of oxygen supplied in the first step, or without supplying the oxygen. | ||
| 申请公布号 | US9252323(B2) | 申请公布日期 | 2016.02.02 |
| 申请号 | US201514670106 | 申请日期 | 2015.03.26 |
| 申请人 | NICHIA CORPORATION | 发明人 | Michiue Atsuo |
| 分类号 | H01G9/20;H01L33/00;H01L33/18 | 主分类号 | H01G9/20 |
| 代理机构 | Foley & Lardner LLP | 代理人 | Foley & Lardner LLP |
| 主权项 | 1. A method for manufacturing a nitride semiconductor element comprising: a step of laminating a first nitride semiconductor layer of single crystals of AlxGa1-xN (0.5<X≦1) on an upper surface of a sapphire substrate by a metal organic chemical vapor deposition; and a step of laminating a second nitride semiconductor layer on the first nitride semiconductor layer, wherein the step of laminating the first nitride semiconductor layer includes: a first step of coating an entire upper surface of the sapphire substrate with an under nitride semiconductor layer while supplying oxygen, and a second step of growing an upper nitride semiconductor layer while supplying oxygen at a smaller flow rate than that of oxygen supplied in the first step, or without supplying oxygen. | ||
| 地址 | Anan-Shi JP | ||