Semiconductor light emitting element and light emitting device

摘要

A semiconductor light emitting element (1) includes; an n-type semiconductor layer (120), a light emitting layer (130), a p-type semiconductor layer (140), a p-side power supply portion (150), and an n-side power supply portion (160) that includes an n-side power supply electrode (162), an n-side auxiliary electrode (163) and n-side connective electrodes (164). The n-side power supply electrode (162) and auxiliary electrode (163) are provided in the inner side beyond the p-type semiconductor layer (140) viewed from the light emitting layer (130). On the p-type semiconductor layer (140), a power supply insulating layer (170) transparent to light from the light emitting layer (130) is provided, and portions at lower side of the n-side power supply electrode (162) and auxiliary electrode (163) are set to have a thickness with which the light is easily reflected, and other portions are set to have a thickness with which the light is easily transmitted.

主权项

1. A semiconductor light emitting element comprising:
a first semiconductor layer that is composed of a compound semiconductor with a first conductive type; a light emitting layer that is provided on the first semiconductor layer to be in contact with the first semiconductor layer, is composed of a compound semiconductor, and emits light with current flow; a second semiconductor layer that is provided on the light emitting layer to be in contact with the light emitting layer and composed of a compound semiconductor with a second conductive type different from the first conductive type; a first power supply electrode that is provided at a rear side of the second semiconductor layer in the view from the light emitting layer, is composed of metal, and electrically connected to the first semiconductor layer; a second power supply electrode that is provided at the rear side of the second semiconductor layer in the view from the light emitting layer, is composed of metal, and electrically connected to the second semiconductor layer; and a transparent insulating layer that is provided at the rear side of the second semiconductor layer in the view from the light emitting layer, is composed of materials having permeability to the light of a wavelength emitted from the light emitting layer, and electrically insulates the first power supply electrode and the second power supply electrode; wherein, the transparent insulating layer comprises;
a first transparent insulating portion that is set to have a first thickness with which the light emitted from the light emitting layer is transmitted, and is provided on portions provided at the rear side of the second semiconductor layer in the view from the light emitting layer and provided not to correspond to the first power supply electrode and the second power supply electrode; anda second transparent insulating portion that is set to have a second thickness with which the light emitted from the light emitting layer is reflected, and is provided on portions between the second semiconductor layer and the first power supply electrode and on portions between the second semiconductor layer and the second power supply electrode.