Thin film structures and devices with integrated light and heat blocking layers for laser patterning

摘要

Selective removal of specified layers of thin film structures and devices, such as solar cells, electrochromics, and thin film batteries, by laser direct patterning is achieved by including heat and light blocking layers in the device/structure stack immediately adjacent to the specified layers which are to be removed by laser ablation. The light blocking layer is a layer of metal that absorbs or reflects a portion of the laser energy penetrating through the dielectric/semiconductor layers and the heat blocking layer is a conductive layer with thermal diffusivity low enough to reduce heat flow into underlying metal layer(s), such that the temperature of the underlying metal layer(s) does not reach the melting temperature, Tm, or in some embodiments does not reach (Tm)/3, of the underlying metal layer(s) during laser direct patterning.

主权项

1. An apparatus for forming electrochemical devices, comprising:
a first system for blanket depositing on a substrate a stack including a cathode current collector layer, a heat blocking layer, a light blocking layer, a cathode layer, an electrolyte layer, an anode layer, an anode current collector layer and a protective coating layer; and a second system for direct laser patterning said stack, said second system comprising at least one laser; wherein said light blocking layer is a layer of metal characterized by the property of absorbing or reflecting a portion of the laser energy reaching said light blocking layer and said heat blocking layer is a conductive layer with thermal diffusivity, D, low enough to reduce heat flow through said heat blocking layer during laser direct patterning such that the temperature of an adjacent device layer exceeds the melting temperature, Tm, of said adjacent device layer.