| 发明名称 | Semiconductor device with compressive layers | ||
| 摘要 | A semiconductor device includes a substrate having a first side and a second side opposite the first side. The substrate has a sensor region proximate the first side. The semiconductor device also includes a first compressive layer over the second side of the substrate. The semiconductor device further includes a light blocking element over the first compressive layer. The semiconductor device additionally includes a second compressive layer over the first compressive layer and covering a portion of the light blocking element. The semiconductor device also includes a third compressive layer between the second compressive layer and the portion of the light blocking element. | ||
| 申请公布号 | US9252296(B2) | 申请公布日期 | 2016.02.02 |
| 申请号 | US201514713559 | 申请日期 | 2015.05.15 |
| 申请人 | TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. | 发明人 | Tsao Chun-Han;Lai Chih-Yu;Huang Chih-Hui;Wu Cheng-Ta;Tu Yeur-Luen;Wang Ching-Chun;Ting Shyh-Fann;Tsai Chia-Shiung |
| 分类号 | H01L31/102;H01L21/00;H01L31/0216;H01L51/42;H01L27/146;H01L27/148 | 主分类号 | H01L31/102 |
| 代理机构 | Hauptman Ham, LLP | 代理人 | Hauptman Ham, LLP |
| 主权项 | 1. A semiconductor device, comprising: a substrate having a first side and a second side opposite the first side, the substrate having a sensor region proximate the first side; a first compressive layer over the second side of the substrate; a light blocking element over the first compressive layer; a second compressive layer over the first compressive layer and covering a portion of the light blocking element; and a third compressive layer between the second compressive layer and the portion of the light blocking element. | ||
| 地址 | TW | ||