Nonvolatile semiconductor memory element, nonvolatile semiconductor memory, and method for operating nonvolatile semiconductor memory element

摘要

According to an aspect of the present invention, there is provided a nonvolatile semiconductor memory element including: a semiconductor substrate including: a source region; a drain region; and a channel region; a lower insulating film that is formed on the channel region; a charge storage film that is formed on the lower insulating film and that stores data; an upper insulating film that is formed on the charge storage film; and a control gate that is formed on the upper insulating film, wherein the upper insulating film includes: a first insulting film; and a second insulating film that is laminated with the first insulating film, and wherein the first insulating film is formed to have a trap level density larger than that of the second insulating film.

主权项

1. A nonvolatile semiconductor memory comprising:
a semiconductor film; a lower insulating film that is disposed on the semiconductor film; a conductive charge storage film that is disposed on the lower insulating film; an upper insulating film that is disposed on the conductive charge storage film and that has a four-or-more-layer structure; and a control gate that is disposed on the upper insulating film; wherein the upper insulating film includes:
a first insulating film that is disposed on the conductive charge storage film;a second insulating film that is disposed on the first insulating film and that includes Hf; anda third insulating film that is disposed on the second insulating film;wherein a thickness of the first insulating film is less than a thickness of the third insulating film.