Partially-blocked well implant to improve diode ideality with SiGe anode

摘要

A method of manufacturing a semiconductor device is disclosed. A p-type substrate is doped to form an N-well in a selected portion of a p-type substrate adjacent an anode region of the substrate. A p-type doped region is formed in the anode region of the p-type substrate. The p-type doped region and the N-well form a p-n junction.

主权项

1. A method of manufacturing a semiconductor device, comprising:
doping a p-type substrate to form an N-well from one portion of the p-type substrate adjacent an anode region from another portion of the p-type substrate, wherein an interface between the N-well and the anode extends vertically from a top surface of the p-type substrate to a bottom surface of the p-type substrate; etching a cavity to a selected depth in the anode region adjacent the N-well; depositing p-type doped material in the cavity to form a p-type doped region adjacent the N-well, wherein the interface between the N-well and the anode provides a sidewall boundary of the p-type material and a p-n junction associated with the p-type doped region extends into the N-well and into the anode region; and forming a gate stack on the N-well having a spacer, wherein an outer sidewall of the gate stack is aligned with the vertical interface between the N-well and the anode.