Semiconductor device and method for manufacturing the same

摘要

A first conductive film overlapping with an oxide semiconductor film is formed over a gate insulating film, a gate electrode is formed by selectively etching the first conductive film using a resist subjected to electron beam exposure, a first insulating film is formed over the gate insulating film and the gate electrode, removing a part of the first insulating film while the gate electrode is not exposed, an anti-reflective film is formed over the first insulating film, the anti-reflective film, the first insulating film and the gate insulating film are selectively etched using a resist subjected to electron beam exposure, and a source electrode in contact with one end of the oxide semiconductor film and one end of the first insulating film and a drain electrode in contact with the other end of the oxide semiconductor film and the other end of the first insulating film are formed.

主权项

1. A semiconductor device comprising:
an oxide semiconductor film over an insulating surface; a gate insulating film over the oxide semiconductor film; a gate electrode provided over the gate insulating film and overlapping with the oxide semiconductor film; a first insulating film over the gate insulating film and the gate electrode; a source electrode in direct contact with a top surface of the oxide semiconductor film, a first side surface of the oxide semiconductor film and a first side surface of the first insulating film; a drain electrode in direct contact with the top surface of the oxide semiconductor film, a second side surface of the oxide semiconductor film and a second side surface of the first insulating film; and a second insulating film over the source electrode and the drain electrode, wherein the first insulating film is in direct contact with a top surface of the gate electrode, a first side surface of the gate electrode and a second side surface of the gate electrode, wherein heights of top surfaces of the source electrode and the drain electrode are substantially the same as heights of top surfaces of the first insulating film and the second insulating film, and wherein a channel length of the oxide semiconductor film is greater than or equal to 1 nm and less than or equal to 30 nm.