Gas sensor

摘要

A gas sensor that can enhance gas detection sensitivity more than the conventional sensors with a simple configuration is proposed. An electric double layer including a gate insulating layer is formed in an ionic liquid (IL), a change of a state of the gate insulating layer in the ionic liquid (IL) that occurs by absorbing a gas is directly reflected in a source-drain current (Isd) that flows in a carbon nanotube (8). Therefore, the gas detection sensitivity can be enhanced more than in the conventional sensors. Further, since the ionic liquid (IL) can be simply provided on a substrate (2) to be in contact with the carbon nanotube (8) and a gate electrode (7), the configuration that chemically modifies a surface of the carbon nanotube with a plurality of polymers as in the conventional gas sensors is not needed, and the configuration can be simplified correspondingly.

主权项

1. A gas sensor that detects a gas that is a target of detection, comprising:
a carbon nanotube provided between a source electrode and a drain electrode on a substrate, and a source-drain current flows therein; and a gas absorbing liquid disposed to cover the carbon nanotube, wherein the gas is detected based on a change of the source-drain current in the carbon nanotube caused by absorbing the gas in the gas absorbing liquid, wherein the gas absorbing liquid is in contact with the carbon nanotube and a gate electrode on the substrate to become a gate insulating layer, a state of the gate insulating layer changes by absorbing the gas, and the gas is detected based on a change of the source-drain current that occurs in response to the state of the gate insulating layer, wherein the gate electrode is configured by a first gate electrode portion and a second gate electrode portion, and the carbon nanotube is disposed between the first gate electrode portion and the second gate electrode portion, and the gas absorbing liquid is disposed to be in contact with the first gate electrode portion and the second gate electrode portion, and wherein the gas absorbing liquid is held in a gap formed between the first gate electrode portion and the second gate electrode portion.