发明名称 |
SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE |
摘要 |
The present invention is to provide a semiconductor device with a low height and low thermal resistance and a manufacturing method thereof. The semiconductor device comprises: a support plate (1); a semiconductor chip (2) which is mounted on one main surface of the support plate (1) with an adhesive layer interposed therebetween so that an element circuit surface faces upward; an insulation material layer (4) which seals the semiconductor chip (2) and surroundings thereof; an opening which is formed on an electrode disposed on the element circuit surface of the semiconductor chip (2) in the insulation material layer (4); a conductive portion (6) which is formed in the opening to be connected to the electrode of the semiconductor chip; a wiring layer (5) which is formed on the insulation material layer (4) to be connected to the conductive portion (6) and a part of which extends to a surrounding area of the semiconductor chip (2); and an external electrode (7) which is formed on the wiring layer (5), wherein the support plate (1) is a flat plate constituting a top layer of a complex support plate separated from the complex support plate formed by laminating multiple flat plates used in a manufacturing process of the semiconductor device. |
申请公布号 |
KR20160012091(A) |
申请公布日期 |
2016.02.02 |
申请号 |
KR20150103923 |
申请日期 |
2015.07.22 |
申请人 |
J-DEVICES CORPORATION |
发明人 |
IKEMOTO YOSHIHIKO;INOUE HIROSHI;ISHIDO KIMINORI;MATSUBARA HIROAKI;IMAIZUMI YUKARI |
分类号 |
H01L25/07;H01L23/12;H01L23/28;H01L23/485 |
主分类号 |
H01L25/07 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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