发明名称 Solution containment during buffer layer deposition
摘要 Improved methods and apparatus for forming thin-film layers of chalcogenide on a substrate web. Solutions containing the reactants for the chalcogenide layer may be contained substantially to the front surface of the web, controlling the boundaries of the reaction and avoiding undesired deposition of chalcogenide upon the back side of the web.
申请公布号 US9252318(B2) 申请公布日期 2016.02.02
申请号 US201314108193 申请日期 2013.12.16
申请人 Hanergy Hi-Tech Power (HK) Limited 发明人 Britt Jeffrey S.;Albright Scot;Schoop Urs;Stoss Walter;Verebelyi Darren
分类号 B05D5/12;C23C14/54;H01L31/18;H01L31/0392;H01L31/0749 主分类号 B05D5/12
代理机构 Kolisch Hartwell, P.C. 代理人 Kolisch Hartwell, P.C.
主权项 1. A method of depositing a thin film chalcogenide buffer layer onto a flexible substrate, comprising: transporting a web of thin film substrate material through a deposition region by sliding the web over a support surface disposed within the deposition region; dispensing onto a top surface of the web a metal-containing solution containing a metal chosen from the group consisting of copper, silver, gold, zinc, cadmium, mercury, lead, boron, aluminum, gallium, indium and thallium, and a chalcogen-containing solution containing a chalcogen chosen from the group consisting of oxygen, sulfur, selenium and tellurium; lifting transverse edge portions of the web relative to a central portion of the web to contain at least a portion of the metal-containing solution and at least a portion of the chalcogen-containing solution substantially upon the top surface of the web; holding the central portion of the web substantially flat with a plurality of magnets disposed in fixed positions under the central portion of the web; and supporting the central portion of the web on a hydrostatic bearing surface disposed between the web and at least portions of the support surface.
地址 West KL HK