发明名称 |
Photovoltaic back contact |
摘要 |
A method to preparing Cadmium telluride surface before forming metal back contact is disclosed. The method can include removing carbon from Cadmium telluride surface. |
申请公布号 |
US9252302(B2) |
申请公布日期 |
2016.02.02 |
申请号 |
US201314072237 |
申请日期 |
2013.11.05 |
申请人 |
First Solar, Inc. |
发明人 |
Addepalli Pratima V.;Deeken John S.;Karpenko Oleh Petro |
分类号 |
H01L31/0224;C11D3/20;C11D3/30;C11D7/26;C11D7/32;C11D11/00;H01L31/073;H01L31/18 |
主分类号 |
H01L31/0224 |
代理机构 |
Dickstein Shapiro LLP |
代理人 |
Dickstein Shapiro LLP |
主权项 |
1. A method of manufacturing a photovoltaic device comprising the steps of: forming a transparent conductive oxide layer adjacent to a substrate; forming a semiconductor window layer adjacent to the transparent conductive oxide layer; forming a semiconductor absorber layer adjacent to the semiconductor window layer, wherein the semiconductor absorber layer comprises cadmium telluride and a carbon-containing material; contacting a cleaning agent to the carbon-containing material, thereby removing a portion of the carbon-containing material from the cadmium telluride layer; and forming a back contact layer adjacent to the absorber layer surface. |
地址 |
Perrysburg OH US |