发明名称 Photovoltaic back contact
摘要 A method to preparing Cadmium telluride surface before forming metal back contact is disclosed. The method can include removing carbon from Cadmium telluride surface.
申请公布号 US9252302(B2) 申请公布日期 2016.02.02
申请号 US201314072237 申请日期 2013.11.05
申请人 First Solar, Inc. 发明人 Addepalli Pratima V.;Deeken John S.;Karpenko Oleh Petro
分类号 H01L31/0224;C11D3/20;C11D3/30;C11D7/26;C11D7/32;C11D11/00;H01L31/073;H01L31/18 主分类号 H01L31/0224
代理机构 Dickstein Shapiro LLP 代理人 Dickstein Shapiro LLP
主权项 1. A method of manufacturing a photovoltaic device comprising the steps of: forming a transparent conductive oxide layer adjacent to a substrate; forming a semiconductor window layer adjacent to the transparent conductive oxide layer; forming a semiconductor absorber layer adjacent to the semiconductor window layer, wherein the semiconductor absorber layer comprises cadmium telluride and a carbon-containing material; contacting a cleaning agent to the carbon-containing material, thereby removing a portion of the carbon-containing material from the cadmium telluride layer; and forming a back contact layer adjacent to the absorber layer surface.
地址 Perrysburg OH US