| 发明名称 | Semiconductor structure and method for manufacturing the same | ||
| 摘要 | A semiconductor structure and a method for manufacturing the same are provided. The semiconductor structure comprises a conductive layer, a via, and a barrier layer disposed between the conductive layer and the via. The barrier layer is stuffed with oxygen. | ||
| 申请公布号 | US9252102(B2) | 申请公布日期 | 2016.02.02 |
| 申请号 | US201414297679 | 申请日期 | 2014.06.06 |
| 申请人 | MACRONIX INTERNATIONAL CO., LTD. | 发明人 | Yu Bing-Lung;Yeh Chin-Tsan;Hung Yung-Tai;Su Chin-Ta |
| 分类号 | H01L23/52;H01L23/532;H01L23/522;H01L21/768 | 主分类号 | H01L23/52 |
| 代理机构 | McClure, Qualey & Rodack, LLP | 代理人 | McClure, Qualey & Rodack, LLP |
| 主权项 | 1. A semiconductor structure, comprising: a conductive layer; a via; and a barrier layer disposed between the conductive layer and the via, wherein the barrier layer is stuffed with oxygen, and the oxygen is stuffed into grain boundaries of the barrier layer. | ||
| 地址 | Hsinchu TW | ||