Methods for a phase-change memory array

摘要

Methods of operating phase-change memory arrays are described. A method includes determining a pattern to be written to a phase-change memory array and executing, according to the pattern, two or more proper reset sequences on the phase-change memory array to write the pattern to the phase-change memory array. Another method includes executing a set sequence on a phase-change memory array and performing a proper read of the phase-change memory array to obtain a pattern derived from executing the set sequence.

主权项

1. A method of operating a phase-change memory array, the method comprising:
defining a starting condition for each cell in the phase-change memory array prior to storing a plurality of bits in the phase-change memory array, the starting condition being defined by providing either hard reset pulses or soft reset pulses to each of the cells in the phase-change memory array; determining a pattern to be written to the phase-change memory array, the pattern comprising both real data bits having sensitive information to be stored and data bits having a state that is unimportant to the sensitive information to be stored; and writing the pattern to the phase-change memory array.