PROCEDE DE FABRICATION D'ELEMENTS DE CIRCUIT INTEGRE A SEMI-CONDUCTEURS

摘要

1,070,278. Semi-conductor devices. WESTERN ELECTRIC CO. Inc. Aug. 13, 1964 [Aug. 19, 1963], No. 32975/64. Heading H1K. In a method of producing a plurality of electrically isolated regions of semi-conductor material in a single wafer, a pattern of slots is formed in one face of a slice of semi-conductor material, dielectric material is deposited in the slots and on the slotted face, and sufficient material is removed from the opposite surface of the slice to expose the bottoms of the slots. As shown, one surface of a slice 10 of N-type silicon is polished and then masked by vapour depositing layers of aluminium and nickel, sintering, coating with photoresist and gold plating the exposed metal surfaces. The remaining photoresist is removed and the metal layer and underlying semi-conductor material not protected by the gold plating are etched away to produce a pattern of slots. The remaining metal layers are removed and silicon dioxide is vapour deposited in the slots and on the surface of the slice to form a dielectric layer 16 to which a polycrystalline or low-quality silicon slice 17 is cemented. Alternatively a polycrystalline layer may be deposited on the silicon oxide layer. The lower face of the slice is now removed at least to the line 18 so that the silicon slice is divided into a plurality of electrically isolated regions in which elements of integrated circuits, such as transistors, diodes, resistors and PN junction capacitors may be produced by diffusion and/or epitaxial deposition. Metal electrodes may be applied and interconnections made to form an integrated circuit. The surface of the slice in which the slots are etched may be provided with an N+ type layer 11 by diffusion to provide lowresistance collector regions for transistors. Alternatively the original slice may comprise a high-resistivity N-type layer epitaxially deposited on an N+ type substrate. The semiconductor material may also be germanium or an intermetallic compound, and the silicon dioxide may be replaced by other glasses.