Independent gate vertical FinFET structure

摘要

A semiconductor device includes a substrate extending in a first direction to define a substrate length and a second direction perpendicular to the first direction to define a substrate width. A first semiconductor fin is formed on an upper surface of the substrate. The first semiconductor fin extends along the second direction at a first distance to define a first fin width. A first gate channel is formed between a first source/drain junction formed in the substrate and a second source/drain junction formed in the first semiconductor fin. A first gate stack is formed on sidewalls of the first gate channel. A first spacer is interposed between the first gate stack and the first source/drain junction.

主权项

1. A semiconductor device, comprising:
a substrate extending in a first direction to define a substrate length and a second direction perpendicular to the first direction to define a substrate width; a first semiconductor fin formed on an upper surface of the substrate, the first semiconductor fin extending along the second direction a first distance to define a first fin width; a first gate channel formed between a first source/drain junction formed in the substrate and a second source/drain junction formed in the first semiconductor fin; a first gate stack formed on sidewalls of the first gate channel; and a first spacer interposed between the first gate stack and the first source/drain junction.