CMOS-compatible gold-free contacts

摘要

A semiconductor metallurgy includes a ratio of germanium and palladium that provides low contact resistance to both n-type material and p-type material. The metallurgy allows for a contact that does not include gold and is compatible with mass-production CMOS techniques. The ratio of germanium and palladium can be achieved by stacking layers of the materials and annealing the stack, or simultaneously depositing the germanium and palladium on the material where the contact is to be manufactured.

主权项

1. A semiconductor device comprising:
a semiconductor device layer; a first region of an n-type material, the first region disposed in or on the semiconductor device layer; a second region of a p-type material, the second region disposed in or on the semiconductor device layer; a first contact manufactured on the semiconductor device layer with a complementary metal-oxide-semiconductor (CMOS) process, wherein the first contact is disposed directly on a surface of the first region, the first contact including a first layer of a contact material including germanium (Ge) and palladium (Pd), the first layer having a ratio of Ge to Pd that provides for both p-type materials and n-type materials a contact resistivity equal to or less than 6×10−5 Ohm-cm, wherein the ratio of Ge to Pd is within a range of approximately 1.25-2.0 parts Ge per part Pd; a second contact manufactured on the semiconductor device layer with the CMOS process, wherein the second contact is disposed directly on a surface of the second region, the second contact including a second layer of the contact material including Ge and Pd, the second layer having the ratio of Ge to Pd.