Method for handling very thin device wafers

摘要

A structure and method of handling a device wafer during through-silicon via (TSV) processing are described in which a device wafer is bonded to a temporary support substrate with a permanent thermosetting material. Upon removal of the temporary support substrate a planar frontside bonding surface including a reflowed solder bump and the permanent thermosetting material is exposed.

主权项

1. A method comprising:
providing a device wafer including a front surface and a solder bump formed over the front surface; providing a support substrate including a planar wetting surface, wherein a layer of thermosetting material is formed on the planar wetting surface; bonding the device wafer to the support substrate under heat and pressure, wherein the bonding comprises:
penetrating the layer of thermosetting material with the solder bump;wetting the planar wetting surface with the solder bump while reflowing the solder bump; andat least partially curing the thermosetting material; and removing the support substrate to expose a planar frontside bonding surface including the reflowed solder bump and the at least partially cured thermosetting material.