| 发明名称 | Method of making bond pad | ||
| 摘要 | A method of making a bonding pad for a semiconductor device which includes forming a first region over a buffer layer, where the first region includes aluminum and having a first average grain size. The method further includes forming a second region over the first region, where the second region includes aluminum, and where the second region has a second average grain size different from the first average grain size. Additionally, the method includes forming a first passivation layer surrounding the first region and the second region. Furthermore, the method includes forming a second passivation layer partially covering the second region, where the first region and the second region extend along a top surface of the first passivation layer. | ||
| 申请公布号 | US9252109(B2) | 申请公布日期 | 2016.02.02 |
| 申请号 | US201414330473 | 申请日期 | 2014.07.14 |
| 申请人 | TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. | 发明人 | Chuang Chiang-Ming;Huang Chun Che;Chang Shih-Chieh |
| 分类号 | H01L21/3205;H01L23/00 | 主分类号 | H01L21/3205 |
| 代理机构 | Hauptman Ham, LLP | 代理人 | Hauptman Ham, LLP |
| 主权项 | 1. A method of making a bonding pad for a semiconductor device comprising: forming a first region over a buffer layer, the first region comprising aluminum and having a first average grain size; forming a second region over the first region, the second region comprising aluminum, wherein the second region has a second average grain size different from the first average grain size; forming a first passivation layer surrounding the first region and the second region; and forming a second passivation layer partially covering the second region; wherein the first region and the second region extend along a top surface of the first passivation layer. | ||
| 地址 | TW | ||