Three-dimensional mounting semiconductor device and method of manufacturing three-dimensional mounting semiconductor device

摘要

A three-dimensional mounting semiconductor device includes a layer structure including a plurality of first substrates with a trench-shaped concavity formed in and a plurality of second substrates with semiconductor elements formed in, which are alternately stacked, wherein an unevenness defined by a size difference between the first substrate and the second substrate is formed on a side surface, and a first through-hole are defined by an inside surface of the trench-shaped concavity and a surface of the second substrate, and a third substrate jointed to the side surface of the layer structure and having an unevenness formed on a surface jointed to the layer structure which are engaged with the unevenness formed on the side surface of the layer structure.

主权项

1. A three-dimensional mounting semiconductor device comprising:
a layer structure including a plurality of first substrates with a trench-shaped concavity formed in and a plurality of second substrates with semiconductor elements formed in, which are alternately stacked,
wherein an unevenness defined by a size difference between the first substrate and the second substrate is formed on a side surface of the layer structure, anda first through-hole is defined by an inside surface of the trench-shaped concavity and a surface of the second substrate; and a third substrate jointed to the side surface of the layer structure and having an unevenness formed on a surface jointed to the layer structure which is engaged with the unevenness formed on the side surface of the layer structure, the third substrate covering the whole area of the side surface of the layer structure, wherein the first substrate, the second substrate and the third substrates are formed of materials of the same thermal expansion coefficient.