| 主权项 |
1. A film deposition method comprising steps of:
depositing a first metal compound film by performing a first cycle of exposing a substrate to a first source gas containing a first metal, and of exposing the substrate to a reaction gas reactive with the first source gas; and depositing a second metal compound film on the first metal compound film by performing a second cycle, said second cycle comprising: adsorbing the first source gas on the first metal compound film, which is already deposited on the substrate, by exposing the first metal compound film to the first source gas; exposing, after adsorbing the first source gas on the first metal compound film, the first metal compound film to a second source gas containing a second metal in a state in which the first source gas is already adsorbed on the first metal compound film such that the second source gas is adsorbed in addition to the first source gas on the first metal compound film; and exposing the substrate, on which the first and the second source gases are adsorbed, to the reaction gas, the reaction gas being reactive also with the second source gas, wherein said second source gas causes, upon absorption on the first metal compound film, a part of said first source gas to be released from a surface of the first metal compound film to which the first source gas has been adsorbed. |
