Method for processing structure in manufacturing semiconductor device

摘要

A method used for processing a structure in manufacturing of a semiconductor device may include polishing the structure to form a polished structure. The polished structure may include a metal member, a dielectric layer that contacts the metal member, and a particle that contacts at least one of the metal member and the dielectric layer. The method may further include applying an organic acid to the polished structure to remove at least a portion of the particle. The particle may be substantially removed, such that satisfactory quality of the semiconductor may be provided.

主权项

1. A method for processing a structure in manufacturing of a semiconductor device, the method comprising:
polishing the structure to form a polished structure, the polished structure comprising a first metal member, a dielectric layer that contacts the first metal member, and a particle that contacts at least one of the first metal member and the dielectric layer; applying a first organic acid to the polished structure to remove at least a first portion of the particle, and applying a second organic acid to remove a second portion of the particle, wherein the first organic acid is applied in a solution polishing process to remove the first portion of the particle, wherein the second organic acid is used in a chemical cleaning process to remove the second portion of the particle, and wherein the chemical cleaning process is performed after the solution polishing process.