| 摘要 |
The present invention relates to a data storage device and, more specifically, to a data storage device capable of lowering an error generation rate of data read from a memory device to reduce failure of a read operation and an operating method thereof. The operating method of the data storage device comprises the following steps of: performing a read operation by applying a read voltage to a memory cell requested to be read from a host device; performing a first static read fail solving operation in which the memory cell is read again by applying read fail solving voltages included in a first group to the memory cell when the read operation fails; and performing a second static read fail solving operation in which the memory cell is read again by applying read fail solving voltages included in a second group to the memory cell when the first static read fail solving operation fails. |
