Semiconductor device having penetrating electrodes each penetrating through semiconductor chip

摘要

Disclosed herein is a device that includes: a semiconductor substrate; plurality of first through-substrate vias each penetrating through the semiconductor substrate, a plurality of second through-substrate vias each penetrating through the semiconductor substrate, an insulating film formed over the semiconductor substrate, the insulating film including a first opening and a plurality of second openings, the first opening being located over the first through-substrate vias, and each of the second openings being located over a corresponding one of the second through-substrate vias.

主权项

1. A semiconductor device comprising:
a semiconductor substrate including a first surface and a second surface opposite to each other; and a plurality of alignment marks, the plurality of alignment marks comprising a plurality of first through-substrate vias, each of the plurality of first through-substrate vias penetrating through the semiconductor substrate from the first surface to the second surface, each of the plurality of first through-substrate vias including a first bump that protrudes from the first surface of the semiconductor substrate.