Semiconductor device and method of forming a conductive via-in-via structure

摘要

A semiconductor device is made from a semiconductor wafer containing semiconductor die separated by a peripheral region. A conductive via-in-via structure is formed in the peripheral region or through an active region of the device to provide additional tensile strength. The conductive via-in-via structure includes an inner conductive via and outer conductive via separated by insulating material. A middle conductive via can be formed between the inner and outer conductive vias. The inner conductive via has a first cross-sectional area adjacent to a first surface of the semiconductor device and a second cross-sectional area adjacent to a second surface of the semiconductor device. The outer conductive via has a first cross-sectional area adjacent to the first surface of the semiconductor device and a second cross-sectional area adjacent to the second surface of the semiconductor device. The first cross-sectional area is different from the second cross-sectional area.

主权项

1. A semiconductor device, comprising:
a semiconductor wafer including a plurality of semiconductor die formed in the semiconductor wafer; and a via-in-via structure formed in a non-active region of the semiconductor wafer between the semiconductor die and including,
(a) an inner conductive via,(b) an outer conductive via formed around the inner conductive via, and(c) an insulating material disposed between the inner conductive via and outer conductive via.