发明名称 |
Semiconductor package and method of fabricating the same |
摘要 |
Provided is a semiconductor package including a lower package, an interposer on the lower package, and an upper package on the interposer. The lower package may include a lower package substrate, a lower semiconductor chip on the lower package substrate, and a lower heat-transfer layer on the lower semiconductor chip. The interposer may include an interposer substrate, first and second heat-transfer openings defined by recessed bottom and top surfaces, respectively, of the interposer substrate, an upper interposer heat-transfer pad disposed in the second heat-transfer opening, and an upper heat-transfer layer disposed on the upper interposer heat-transfer pad. The upper package may include an upper package substrate, an upper package heat-transfer pad, which may be disposed in a third heat-transfer opening defined by a recessed bottom surface of the upper package substrate, and an upper semiconductor chip disposed on the upper package substrate. |
申请公布号 |
US9252031(B2) |
申请公布日期 |
2016.02.02 |
申请号 |
US201414493379 |
申请日期 |
2014.09.23 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
Im Hohyeuk;Kim Jongkook;Seong Gowoon;Lee SeokWon;Jang Byoungwook;Cho Eunseok |
分类号 |
H01L23/495;H01L21/56;H01L23/367;H01L23/498;H01L23/538;H01L25/10;H01L25/00;H01L23/00;H01L23/31 |
主分类号 |
H01L23/495 |
代理机构 |
Muir Patent Law, PLLC |
代理人 |
Muir Patent Law, PLLC |
主权项 |
1. A semiconductor package, comprising:
a lower package including a lower package substrate, a lower semiconductor chip disposed on the lower package substrate, and a lower heat-transfer layer disposed on the lower semiconductor chip; an interposer provided on the lower package, the interposer comprising an interposer substrate, a first heat-transfer opening defined by a recessed bottom surface of the interposer substrate, a second heat-transfer opening defined by a recessed top surface of the interposer substrate, an upper interposer heat-transfer pad disposed in the second heat-transfer opening, and an upper heat-transfer layer disposed on the upper interposer heat-transfer pad; and an upper package provided on the interposer, the upper package comprising an upper package substrate, an upper package heat-transfer pad disposed in a third heat-transfer opening defined by a recessed bottom surface of the upper package substrate, and an upper semiconductor chip disposed on the upper package substrate, wherein the lower heat-transfer layer is provided in the first heat-transfer opening to be in contact with the upper interposer heat-transfer pad exposed to the first heat-transfer opening, and the upper heat-transfer layer is provided in the third heat-transfer opening to contact the upper package heat-transfer pad. |
地址 |
Gyeonggi-do KR |