METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE, SUBSTRATE PROCESSING DEVICE AND PROGRAM

摘要

PROBLEM TO BE SOLVED: To suppress the generation of an incubation time and the formation of a transition layer when a deposition process is performed on an insulation film.SOLUTION: A film including a first element and a second element is formed on a surface of an insulation film having been subjected to preprocessing by performing cycles for a predetermined number of times, each cycle non-simultaneously performing the steps of: subjecting a surface of the insulation film to the preprocessing by supplying raw materials including the first element and a halogen element to a substrate having a surface on which the insulation film has been formed; supplying the raw materials to the substrate; and supplying a reactant including the second element to the substrate.SELECTED DRAWING: Figure 1