| 摘要 |
PROBLEM TO BE SOLVED: To provide a manufacturing method which is unlikely to be damaged by handling and which can easily obtain a thinner SiC wafer in a manufacturing process of bonding and then separating a single crystalline SiC substrate and a polycrystalline SiC substrate to obtain an SiC wafer.SOLUTION: An SiC wafer manufacturing method comprises: a process of preparing a silicon carbide composite substrate which has a glassy carbon layer on a surface of an SiC base material, and a CVD-SiC layer on the glassy carbon layer, and a single crystalline SiC substrate having an ion injected layer where a hydrogen ion is injected into a surface; a bonding process of bonding the CVD-SiC layer of the silicon carbide composite substrate and the ion injected layer of the single crystalline SiC substrate to obtain a bonded body; a first separation process of heating the bonded body to separate the ion injected layer from the single crystalline SiC substrate to obtain a single crystalline deposited substrate; and a second separation process of separating the glassy carbon layer and the CVD-SiC layer of the single crystalline deposited substrate to obtain an SiC wafer.SELECTED DRAWING: Figure 1 |
