| 摘要 |
Provided is a method of fabricating multilayer graphene. Specifically, the method includes: a process of alternately repeating a first step of forming a catalyst metal layer on a prepared substrate in a reactor and a second step of supplying a carbon source into the reactor to deposit a carbon thin film layer on the catalyst metal layer by physical vapor deposition or atomic layer deposition, in order to form a multilayer thin film including the catalyst metal layer and the carbon thin film layer which are alternately repeatedly deposited; a process of thermally treating the multilayer thin film to synthesize a graphene layer from the carbon thin film layer contained in the multilayer thin film; and a process of selectively removing the catalyst metal layer contained in the multilayer thin film. According to the method, multilayer graphene can be synthesized by one thermal treatment, and production cost and time can be thus reduced. In addition, using a carbon source having various synthesis temperature ranges, it is possible to synthesize multilayer graphene even at low temperatures and to solve problems such as deterioration in physical properties of graphene resulting from high-temperature thermal treatment and damage to physical properties of other materials contained in the substrate and devices. |
