BANDGAP-ENGINEERED MEMORY INCLUDING A PLURALITY OF CHARGE TRAP LAYERS FOR STORING CHARGES

摘要

PROBLEM TO BE SOLVED: To provide a memory in which erase saturation is less likely to occur.SOLUTION: A memory cell includes a gate, a channel material having a channel surface and a channel valence band end, and a dielectric stack between the gate and channel surface. The dielectric stack includes a multilayer tunnel structure on the channel surface, a first charge storage nitride layer on the multilayer tunnel structure, a first blocking dielectric layer on the first charge storage nitride layer, a second charge storage nitride layer on the first blocking dielectric layer, and a second blocking oxide layer on the second charge storage nitride layer. The multilayer tunnel structure includes a first tunnel oxide layer, a first tunnel nitride layer on the first tunnel oxide layer, and a second tunnel oxide layer on the first tunnel nitride layer.SELECTED DRAWING: Figure 8