| 摘要 |
PROBLEM TO BE SOLVED: To reduce gate leakage current of a dummy fill cell for a countermeasure against an antenna effect and suppress an antenna effect, in a semiconductor device using a SOI substrate.SOLUTION: Gate leakage current of a dummy fill cell DT for a countermeasure against an antenna effect is reduced by making the thickness of a gate insulation film GID of the dummy fill cell DT for a countermeasure against an antenna effect greater than the thickness of a gate insulation film GIC of a SOI transistor CT. Furthermore, by making a gate area (gate length×gate width) of the dummy fill cell DT for a countermeasure against an antenna effect greater than a gate area (gate length×gate width) of the SOI transistor CT, a gate capacitance of the dummy fill cell DT for a countermeasure against an antenna effect becomes substantially same with a gate capacitance of the SOI transistor CT, so that an antenna effect can be suppressed.SELECTED DRAWING: Figure 2 |
