| 摘要 |
PROBLEM TO BE SOLVED: To solve a problem of deterioration in flatness of a rear face of a semiconductor wafer and deterioration in bonding reliability when a semiconductor device is bonded with another component, which are caused by generation of microwaviness on the rear face of the semiconductor wafer.SOLUTION: A manufacturing method of a semiconductor wafer 10 having a projecting thread part on a first principal surface side and in a region where a semiconductor device is built in comprises: a first process of attaching a surface protection tape 25 on the first principal surface so as to cover irregularities made by the convex thread part; and a second process of grinding a second principal surface of the semiconductor wafer 10 opposite to the first principal surface by a grinding device based on a surface of the surface protection tape 25, which is opposite to a surface covering the projecting thread part. In the second process, the grinding device controls processing pressure applied to the semiconductor wafer 13 to be kept within a range of not less than 1 kPa and not more than 100 kPa.SELECTED DRAWING: Figure 3 |
