发明名称 PHOTOMASK DEFECT CORRECTION METHOD, DEFECT CORRECTION APPARATUS, AND PHOTOMASK
摘要 PROBLEM TO BE SOLVED: To evaluate side etching nondestructively without taking out a photomask from a vacuum chamber, the side etching being generated in an edge of a circuit pattern formed after a black defect of the photomask is corrected.SOLUTION: A photomask defect correction method corrects a defect of a photomask by the steps of: newly forming an edge of a circuit pattern by etching a black defect of the photomask with a charged particle beam; projecting a laser beam onto the vicinity of the edge and measuring the light transmittance at which the laser beam transmits the photomask; and observing the side etching caused at the edge by the light transmittance.SELECTED DRAWING: Figure 1
申请公布号 JP2016018099(A) 申请公布日期 2016.02.01
申请号 JP20140141261 申请日期 2014.07.09
申请人 TOPPAN PRINTING CO LTD 发明人 MATSUI KAZUAKI
分类号 G03F1/74;G03F1/84;H01L21/66 主分类号 G03F1/74
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