发明名称 |
PHOTOMASK DEFECT CORRECTION METHOD, DEFECT CORRECTION APPARATUS, AND PHOTOMASK |
摘要 |
PROBLEM TO BE SOLVED: To evaluate side etching nondestructively without taking out a photomask from a vacuum chamber, the side etching being generated in an edge of a circuit pattern formed after a black defect of the photomask is corrected.SOLUTION: A photomask defect correction method corrects a defect of a photomask by the steps of: newly forming an edge of a circuit pattern by etching a black defect of the photomask with a charged particle beam; projecting a laser beam onto the vicinity of the edge and measuring the light transmittance at which the laser beam transmits the photomask; and observing the side etching caused at the edge by the light transmittance.SELECTED DRAWING: Figure 1 |
申请公布号 |
JP2016018099(A) |
申请公布日期 |
2016.02.01 |
申请号 |
JP20140141261 |
申请日期 |
2014.07.09 |
申请人 |
TOPPAN PRINTING CO LTD |
发明人 |
MATSUI KAZUAKI |
分类号 |
G03F1/74;G03F1/84;H01L21/66 |
主分类号 |
G03F1/74 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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