| 摘要 |
PROBLEM TO BE SOLVED: To provide a method of forming a sputtering formation film in an oxide state showing a positive property satisfying a nano-meter sized exposure property because the oxide state of a deposited film can accurately be grasped even when a material, which is an inorganic resist film having a composition with Ocontent slightly shifted from a stoichiometric composition of a transition metal oxide, having a capability of absorbing blue-ultraviolet light, which is a wavelength of a semiconductor laser, is formed by using a metal target and adjusting a mixture ratio of Oand Ar, atmosphere gases, and reactive sputtering formation.SOLUTION: A state of a metal oxide formed on a substrate is adjusted by controlling a mixture ratio of atmosphere gases of Oand Ar to 5% or more and 70% or less, a mixture gas pressure to 0.1 Pa or more and 0.4 Pa or less, and applying a DC high voltage between a substrate and a target with in a power density in a range of 150 W/cmor more and 500 W/cmor less.SELECTED DRAWING: Figure 1 |
