发明名称 METHOD AND APPARATUS FOR FORMING FILMS
摘要 PROBLEM TO BE SOLVED: To provide an antireflection film having a low reflectance.SOLUTION: A film forming method for forming an antireflection film 101 on a glass substrate G placed in a processing container 1 using plasma of a mixed gas containing a plurality of kinds of gas includes; a step for supplying the mixed gas to the processing container 1; a step for producing plasma of the mixed gas in the processing container 1; a film-forming step for forming the antireflection film 101 on the glass substrate G using the mixed gas activated by the plasma; and a step for forming a transparent electrode 102 on the antireflection film 101. In the film-forming step, a flow ratio of at least two kinds of gas contained in the mixed gas is altered over time.SELECTED DRAWING: Figure 5
申请公布号 JP2016018155(A) 申请公布日期 2016.02.01
申请号 JP20140142487 申请日期 2014.07.10
申请人 TOKYO ELECTRON LTD 发明人 MORISHIMA MASAHITO;OUCHI KENJI;ICHIKI KAZUYA
分类号 G02B1/10;C23C16/455;C23C16/50;H01L21/31;H01L21/318;H01L31/0216 主分类号 G02B1/10
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