发明名称 |
METHOD AND APPARATUS FOR FORMING FILMS |
摘要 |
PROBLEM TO BE SOLVED: To provide an antireflection film having a low reflectance.SOLUTION: A film forming method for forming an antireflection film 101 on a glass substrate G placed in a processing container 1 using plasma of a mixed gas containing a plurality of kinds of gas includes; a step for supplying the mixed gas to the processing container 1; a step for producing plasma of the mixed gas in the processing container 1; a film-forming step for forming the antireflection film 101 on the glass substrate G using the mixed gas activated by the plasma; and a step for forming a transparent electrode 102 on the antireflection film 101. In the film-forming step, a flow ratio of at least two kinds of gas contained in the mixed gas is altered over time.SELECTED DRAWING: Figure 5 |
申请公布号 |
JP2016018155(A) |
申请公布日期 |
2016.02.01 |
申请号 |
JP20140142487 |
申请日期 |
2014.07.10 |
申请人 |
TOKYO ELECTRON LTD |
发明人 |
MORISHIMA MASAHITO;OUCHI KENJI;ICHIKI KAZUYA |
分类号 |
G02B1/10;C23C16/455;C23C16/50;H01L21/31;H01L21/318;H01L31/0216 |
主分类号 |
G02B1/10 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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