| 摘要 |
PROBLEM TO BE SOLVED: To provide a method of manufacturing an epitaxial silicon wafer in which the density of epitaxial defect is less, and the gettering capability is excellent over the whole radial area of a wafer.SOLUTION: A method of manufacturing an epitaxial silicon wafer includes a preliminary heat treatment step performing heat treatment for increasing the density of oxygen deposit, on a silicon wafer having oxygen concentration in the range of 9×10-16×10atoms/cm, and not containing a dislocation cluster and COP, but including an oxygen deposit suppression region, and an epitaxial layer formation step for forming an epitaxial layer on the surface of the silicon wafer following to the preliminary heat treatment step. This manufacturing method further includes a heat treatment conditions determination step for determining the heat treatment conditions in the preliminary heat treatment step, based on the ratio of the oxygen deposit suppression region of the silicon wafer before executing the preliminary heat treatment step.SELECTED DRAWING: Figure 3 |
