METHOD FOR INTRODUCING IMPURITY, DEVICE FOR INTRODUCING IMPURITY AND METHOD FOR MANUFACTURING SEMICONDUCTOR ELEMENT

摘要

PROBLEM TO BE SOLVED: To increase a penetration depth of an impurity element, in the case where laser doping is performed using an impurity element in a solution.SOLUTION: A method for introducing impurities includes the steps of bringing a solution 4 containing an impurity element into contact with the top of a main surface 2a of a semiconductor substrate 2, and irradiating the main surface 2a of the semiconductor substrate 2 with a laser beam 32 via the solution 4 to raise the temperature of the main surface of the semiconductor substrate 2 at an irradiation position P of the laser beam 32. In the method, the laser beam 32 is applied in a mode where the irradiation is repeated so that the raised temperature does not return to room temperature or in a mode where the raised temperature is kept at a constant temperature, and the impurity element is introduced into a part of the inside of the semiconductor substrate 2.SELECTED DRAWING: Figure 1