Method of growing iridium substituted single crystal using bismuth oxide flux,申请号US19630256221-传众专利搜索

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发明名称	Method of growing iridium substituted single crystal using bismuth oxide flux
摘要
申请公布号	US3162603(A)	申请公布日期	1964.12.22
申请号	US19630256221	申请日期	1963.02.01
申请人	KOHN JACK A;SAVAGE JR ROBERT O;ARTHUR TAUBER	发明人	KOHN JACK A.;JR. ROBERT O. SAVAGE,;TAUBER ARTHUR
分类号	C04B35/26;C30B9/00;C30B9/12	主分类号	C04B35/26
代理机构		代理人
主权项
地址

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