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发明名称
Verfahren zum epitaktischen Herstellen dünner einkristalliner Schichten aus halbleitenden Verbindungen
摘要
申请公布号
AT237683(B)
申请公布日期
1964.12.28
申请号
AT19610008317
申请日期
1961.11.06
申请人
SIEMENS-SCHUCKERTWERKE AKTIENGESELLSCHAFT
发明人
分类号
主分类号
代理机构
代理人
主权项
地址
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