THERMIONICALLY-OVERDRIVEN TUNNEL FETS AND METHODS OF FABRICATING THE SAME

摘要

A field effect transistor (FET) is provided. The FET includes: a nanosheet stack having a first channel layer which defines a channel region of a tunnel FET, and a second channel layer which defines a channel region of a thermionic FET; source and drain regions extended between the first and second channel layers in both sides of the nanosheet stack. A first portion of the source region adjacent to the first channel layer and a second portion of the source region adjacent to the second channel layer have opposite semiconductor conductivity types.