SEMICONDUCTOR DEVICE INCLUDING A THROUGH-VIA ELECTRODE AND FABRICATION METHOD THEREOF

摘要

Provided are a semiconductor device, a fabrication method thereof, and a semiconductor package structure including the same. The method for fabricating the semiconductor device includes the following steps of: preparing a parent substrate including a plurality of package board parts separated aside from each other; installing a first chip including at least one through-via electrode on each of the package board parts, and covering the through-via electrodes by rear surfaces of the first chips; forming a first mold layer on the parent substrate having the first chips; exposing the rear surfaces of the first chips by planarizing the first mold layer; making the first chips thinner and exposing rear surface of the through-via electrodes by etching exposed rear surfaces of the first chips; forming a passivation layer on the planarized first mold layer, the etched rear surfaces of the first chips, and the rear surfaces of the through-via electrodes; and exposing the rear surfaces of the through-via electrodes by selectively removing the passivation layer on the rear surfaces of the through-via electrodes.