THREE DIMENSIONAL NON-VOLATILE MEMORY DEVICE

摘要

An embodiment of the present invention relates to a three-dimensional non-volatile memory device, which includes: a pipe gate; an upper pipe channel buried to a first depth in the pipe gate; a first lower pipe channel which is buried to a second depth deeper than the first depth in the pipe gate, and is arranged adjacently to the upper pipe channel in a first direction; and a second lower pipe channel which is buried in the pipe gate to the second depth, and is arranged adjacently to the upper pipe channel in a second direction perpendicular to the first direction. The upper pipe channel and the lower pipe channel may have the same length.