| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device that suppresses the deterioration of an S/N ratio.SOLUTION: The present invention provides a semiconductor device having a multilayer substrate in which a support substrate and an insulating film are layered, wherein the semiconductor device has: an integrated circuit formed on the multilayer substrate; a wiring layer formed in the insulating film; an electrode opening, formed on the wiring layer, for supplying ground potential to the support substrate; a connection hole formed near the electrode opening and extending from the face of the wiring layer where the electrode opening is formed to the support substrate; and a conductive material formed in shape of a film in an area that includes the surfaces of the electrode opening and connection hole, the conductive material electrically connecting the support substrate and the electrode opening. |
