NON-VOLATILE STORAGE DEVICE AND MANUFACTURING METHOD FOR THE SAME

摘要

PROBLEM TO BE SOLVED: To enable reduction of the probability that the capacity between wires increases in a non-volatile storage device containing a resistance variation element having a resistance variation layer.SOLUTION: A non-volatile storage device has a contact 6 which is formed on a first conduction layer 1 so as to be connected to the first conduction layer 1, and a resistance variation element 10 formed so as to cover the contact 6. The resistance variation element 10 has a first electrode 7, a resistance variation layer 8 and a second electrode 9 which are laminated in this order. An insulation layer 13 is formed to be continuously uniform over an area from the side of the contact 6 to the side of the resistance variation element 10, and a second conduction layer 15 is formed on the insulation layer 13 so as to cover the resistance variation element 10.