SILICON CARBIDE SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME

摘要

PROBLEM TO BE SOLVED: To provide a silicon carbide semiconductor device capable of reducing a forward resistance while keeping high breakdown voltage.SOLUTION: A p-type epitaxial region 3 has a trench TR having a side surface SS and a bottom part BS. An n-type epitaxial region 4 abuts the p-type epitaxial region 3 at the side surface SS and the bottom part BS of the trench TR, respectively. A semiconductor layer 2 covers both of a first main surface 3a of the p-type epitaxial region 3 and the n-type epitaxial region 4. A first electrode 16 is provided on the semiconductor layer 2. A second electrode 20 is provided on a second main surface 3b side of the p-type epitaxial region 3. The first main surface 3a of the p-type epitaxial region 3 is a silicon plane or a plane 8° off the silicon plane. The side surface SS of the trench TR is a plane more than 50° and less than 70° off the silicon plane.